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| Artikelnr.:
2949E-1867383 Fabrikantnr.:
FDMA430NZ EAN/GTIN:
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| This Single N-Channel MOSFET has been designed using an advanced Power Trench process to optimize the RDS(on) @VGS=2.5V on special MicroFET leadframe.RDS(on) = 40mΩ @ VGS = 4.5 V, ID = 5.0A RDS(on) = 50mΩ@ VGS = 2.5 V, ID = 4.5A Low Profile-0.8mm maximum-in the new packageMicroFET 2x2 mm HBM ESD protection level > 2.5k V typical (Note 3) Free from halogenated compounds and antimony oxides Applications This product is general usage and suitable for many different applications. Meer informatie: | | Package Type: | MicroFET 2 x 2 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 2.4 W | Pin Count: | 6 | Number of Elements per Chip: | 1 | Dimensions: | 2 x 2 x 0.75mm | Maximum Operating Temperature: | +150 °C | Length: | 2mm | Minimum Operating Temperature: | -55 °C | Width: | 2mm |
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| Andere zoekwoorden: digitale transistor, 1867383, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FDMA430NZ |
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