|  |
| |
| Artikelnr.:
2949E-1867149 Fabrikantnr.:
FDC8601 EAN/GTIN:
geen gegevens |
| |
|
| | |
| This N-Channel MOSFET is produced using an advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness.Max rDS(on) = 109 mΩat VGS = 10 V, ID = 2.7 A Max rDS(on) = 176 mΩat VGS = 6 V, ID = 2.1 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Fast switching speed Applications This product is general usage and suitable for many different applications. Meer informatie: | | Package Type: | TSOT-23 | Mounting Type: | Surface Mount | Maximum Power Dissipation: | 1.6 W | Pin Count: | 6 | Number of Elements per Chip: | 1 | Dimensions: | 3 x 1.7 x 1mm | Maximum Operating Temperature: | +150 °C | Length: | 3mm | Minimum Operating Temperature: | -55 °C | Width: | 1.7mm |
|
| | |
| | | |
| Andere zoekwoorden: SMD-transistor, SMD-transistors, Schakeltransistor, Schakeltransistors, Transistor, Transistors, digitale transistor, 1867149, Semiconductors, Discrete Semiconductors, Bipolar Transistors, onsemi, FDC8601 |
| | |
| |