onsemi NCD57001DWR2G, MOSFET 1, 7.1 A, 7.8 A, 5V 16-Pin, SOIC

High Current Output(+4/-6 A) at IGBT Miller Plateau Voltages Short Propagation Delays with Accurate Matching DESAT with Soft Turn Off Active Miller Clamp and Negative Gate Voltage High Transient & Electromagnetic Immunity 5 kV Galvanic Isolation Improves system efficiency Improves PWM signal integrity Protection against overload and short circuits Prevents spurious gate turn-on Ruggedness in fast slew rate high voltage and high current switching applications Galvanic isolation to separate high voltage and low voltage sides to provide safety and protection Applications Solar Inverters Motor Control UPS Industrial Power Supplies Welding