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| Artikelnr.:
2949E-1826931 Fabrikantnr.:
DMT6018LDR-13 EAN/GTIN:
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| This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Applications Power Management Functions Analog Switch Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 11.4 A | Maximum Drain Source Voltage: | 60 V | Package Type: | V-DFN3030 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 26 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 1.9 W | Maximum Gate Source Voltage: | ±20 V | Length: | 3.05mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 2 |
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| Andere zoekwoorden: PIN-diodes, 1826931, Semiconductors, Discrete Semiconductors, MOSFETs, DiodesZetex, DMT6018LDR13 |
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