Infineon SRAM Memory Chip, CY7C1061GE30-10ZSXI- 16Mbit

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.High speed tAA = 10 ns/15 ns Embedded error-correcting code (ECC) for single-bit error correction[1, 2] Low active and standby currents ICC = 90 mA typical at 100 MHz ISB2 = 20 mA typical Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and 4.5 V to 5.5 V 1.0 V data retention Transistor-transistor logic (TTL) compatible inputs and outputs Error indication (ERR) pin to indicate 1-bit error detection and correction Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages