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| Artikelnr.:
2949E-1784594 Fabrikantnr.:
FGH40T120SQDNL4 EAN/GTIN:
5059045300373 |
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| This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices Applications Solar inverter UPS Welding Meer informatie: | | Maximum Continuous Collector Current: | 160 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | ±30V | Maximum Power Dissipation: | 454 W | Number of Transistors: | 1 | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | P | Pin Count: | 4 | Transistor Configuration: | Single | Dimensions: | 15.8 x 5.2 x 22.74mm | Gate Capacitance: | 5000pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -55 °C |
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| Andere zoekwoorden: Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 1784594, Semiconductors, Discrete Semiconductors, IGBTs, onsemi, FGH40T120SQDNL4 |
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