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| Artikelnr.:
2949E-1783853 Fabrikantnr.:
Si2319DDS-T1-GE3 EAN/GTIN:
5059045289586 |
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| Channel Type = P
Maximum Continuous Drain Current = 3.6 A
Maximum Drain Source Voltage = 40 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 100 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.5V
Minimum Gate Threshold Voltage = 1V
Maximum Power Dissipation = 1.7 W
Transistor Configuration = Single
Maximum Gate Source Voltage = ±20 V
Number of Elements per Chip = 1mm
Minimum Operating Temperature = -55 °CV Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 3.6 A | Maximum Drain Source Voltage: | 40 V | Package Type: | SOT-23 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 100 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 1.7 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 3.04mm |
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| Andere zoekwoorden: 1783853, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, Si2319DDST1GE3 |
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