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| Artikelnr.:
2949E-1783708 Fabrikantnr.:
SQ2364EES-T1_GE3 EAN/GTIN:
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| TrenchFET® power MOSFET Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 2 A | Maximum Drain Source Voltage: | 60 V | Package Type: | SOT-23 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 600 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 0.46V | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 3 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±8 V | Length: | 3.04mm |
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| Andere zoekwoorden: SMD-transistors, 1783708, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay Siliconix, SQ2364EEST1_GE3 |
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