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| Artikelnr.: 2949E-1777628 Fabrikantnr.: SIHB28N60EF-GE3 EAN/GTIN: geen gegevens |
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| N-Channel MOSFET with Fast Diode, EF Series, Vishay Semiconductor. Reduced Reverse Recovery Time, Reverse Recovery Charge, and Reverse Recovery Current Low figure-of-merit (FOM) Low input capacitance (Ciss) Increased robustness due to low Reverse Recovery Charge Ultra low gate charge (Qg) Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 28 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | EF Series | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 123 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 250 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -30 V, +30 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: MOSFET, MOSFET-transistor, SMD-transistor, SMD-transistors, Schakeltransistor, Schakeltransistors, Transistor, Transistors, mosfet 600v, 1777628, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHB28N60EFGE3 |
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