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| Artikelnr.:
2949E-1720513 Fabrikantnr.:
R8010ANX EAN/GTIN:
5059043335469 |
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| Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.10Ｖ-drive type Nch Power MOSFET Fast Switching Speed Drive circuits can be simple Parallel use is easy Pb Free Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 10 A | Maximum Drain Source Voltage: | 800 V | Package Type: | TO-220FM | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 950 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Minimum Gate Threshold Voltage: | 3V | Maximum Power Dissipation: | 40 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 10.3mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1720513, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, R8010ANX |
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