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| Artikelnr.: 2949E-1712487 Fabrikantnr.: TK65G10N1 EAN/GTIN: 5059041787000 |
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| Channel Type = N Maximum Continuous Drain Current = 136 A Maximum Drain Source Voltage = 100 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 4.5 mΩ Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Power Dissipation = 156 W Transistor Configuration = Single Maximum Gate Source Voltage = ±20 V Width = 10.27mm Height = 4.46mm Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 136 A | Maximum Drain Source Voltage: | 100 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 4.5 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 156 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±20 V | Length: | 10.35mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 1712487, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TK65G10N1 |
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