|  |
| |
| Artikelnr.:
2949E-1712414 Fabrikantnr.:
TJ60S04M3L EAN/GTIN:
5059041322607 |
| |
|
| | |
| Channel Type = P
Maximum Continuous Drain Current = 60 A
Maximum Drain Source Voltage = 40 V
Package Type = DPAK (TO-252)
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 9.4 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3V
Minimum Gate Threshold Voltage = 2V
Maximum Power Dissipation = 90 W
Transistor Configuration = Single
Maximum Gate Source Voltage = -20 V, +10 V
Width = 7mm
Height = 2.3mm Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 60 A | Maximum Drain Source Voltage: | 40 V | Package Type: | DPAK (TO-252) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 9.4 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 90 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +10 V | Length: | 6.5mm | Maximum Operating Temperature: | +175 °C |
|
| | |
| | | |
| Andere zoekwoorden: 1712414, Semiconductors, Discrete Semiconductors, MOSFETs, Toshiba, TJ60S04M3L |
| | |
| |