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| Artikelnr.:
2949E-1711952 Fabrikantnr.:
BSC12DN20NS3GATMA1 EAN/GTIN:
5059043822846 |
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| The Infineon BSC12DN20NS3 G 200V OptiMOS products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.Highest efficiency Highest power density Lowest board space consumption Minimal device paralleling required System cost improvement Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 11.3 A | Maximum Drain Source Voltage: | 200 V | Package Type: | TDSON | Series: | OptiMOS™ 3 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 125 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 50 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | 20 V | Length: | 5.35mm |
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| Andere zoekwoorden: 1711952, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC12DN20NS3GATMA1 |
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