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| Artikelnr.: 2949E-1711915 Fabrikantnr.: IRF7343TRPBF EAN/GTIN: 5059043823034 |
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| Dual N/P-Channel Power MOSFET, Infineon. Infineon ‘s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration. Meer informatie: | | Channel Type: | N, P | Maximum Continuous Drain Current: | 3.4 A, 4.7 A | Maximum Drain Source Voltage: | 55 V | Package Type: | SO-8 | Series: | IRF7343PbF | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.065 Ω, 0.17 Ω | Channel Mode: | Depletion | Minimum Gate Threshold Voltage: | 1V | Maximum Power Dissipation: | 2 W | Maximum Gate Source Voltage: | 20 V | Length: | 5mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 1711915, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF7343TRPBF |
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