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| Artikelnr.:
2949E-1464374 Fabrikantnr.:
IXFK66N85X EAN/GTIN:
5059041431842 |
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| The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.Ultra low on-resistance RDS(ON) and gate charge Qg Fast body diode dv/dt ruggedness Avalanche rated Low package inductance International standard packages Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 66 A | Maximum Drain Source Voltage: | 850 V | Package Type: | TO-264 | Series: | HiperFET | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 65 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5.5V | Minimum Gate Threshold Voltage: | 3.5V | Maximum Power Dissipation: | 1.25 kW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | ±30 V | Length: | 20.3mm |
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| Andere zoekwoorden: 1464374, Semiconductors, Discrete Semiconductors, MOSFETs, IXYS, IXFK66N85X |
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