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| Artikelnr.:
2949E-1458726 Fabrikantnr.:
IKW40N60H3FKSA1 EAN/GTIN:
5059043780672 |
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| Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 600 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 306 W | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single | Dimensions: | 16.13 x 5.21 x 21.1mm | Energy Rating: | 2.12mJ | Gate Capacitance: | 2190pF | Maximum Operating Temperature: | +175 °C | Minimum Operating Temperature: | -40 °C |
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| Andere zoekwoorden: Fastrecovery-diode, Fastrecoverydiode, IGBT, Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 1458726, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW40N60H3FKSA1 |
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