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| Artikelnr.:
2949E-1339879 Fabrikantnr.:
IKW50N65ES5XKSA1 EAN/GTIN:
5059043702247 |
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| Infineon TrenchStop IGBT Transistors, 600 and 650V. A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode. Collector-emitter voltage range 600 to 650V Very low VCEsat Low turn-off losses Short tail current Low EMI Maximum junction temperature 175°C Meer informatie: | | Maximum Continuous Collector Current: | 80 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±20V | Maximum Power Dissipation: | 274 W | Number of Transistors: | 1 | Package Type: | TO-247 | Mounting Type: | Through Hole | Channel Type: | N | Pin Count: | 3 | Switching Speed: | 30kHz | Transistor Configuration: | Single | Dimensions: | 16.13 x 5.21 x 21.1mm | Energy Rating: | 1.78mJ | Gate Capacitance: | 3100pF | Maximum Operating Temperature: | +175 °C |
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| Andere zoekwoorden: Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 1339879, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKW50N65ES5XKSA1 |
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