The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 55m Ohm. It has low on-resistance per unit area and very good switching performan...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
The STMicroelectronics silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistan...
SiC MOSFETThe STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MO...