Schakeltransistor  (13.255 artikelen gevonden)

Producent: NEXPERIA Montage: SMD Behuizing: SOT666 Frequentie: 280MHz;420MHz Collector-emitterspanning: 12V Versterking van transistor: 200 Stroom van de collector: 0,5A Type transistor: NPN / PNP ...

Maximum Continuous Collector Current = 400 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = +/-20V Maximum Power Dissipation = 2.4 kW Package Type = Module Mounting Type ...

Producent: INFINEON TECHNOLOGIES Montage: THT Behuizing: TO247AC Collector-emitterspanning: 600V Spanning poort - verzender: ±20V Stroom van de collector: 90A Stroom van collector in impuls: 225A A...

The Infineon 400A 3-level IGBT module has extremely low switching loss and soft turn-off behaviour. It complies with the relevant standards of 1500V PV inverter. It provides enough creepage distanc...

Producent: IXYS Montage: THT Behuizing: PLUS247™ Collector-emitterspanning: 1,7kV Spanning poort - verzender: ±20V Stroom van de collector: 50A Stroom van collector in impuls: 460A Aansluitingstijd...

Producent: NEXPERIA Montage: SMD Behuizing: SO8 Collector-emitterspanning: 30V Versterking van transistor: 150...500 Stroom van de collector: 5,7/4,8A Type transistor: NPN / PNP Vermogensdissipatie...

Producent: IXYS Montage: THT Behuizing: TO247HV Collector-emitterspanning: 2,5kV Spanning poort - verzender: ±20V Stroom van de collector: 12A Stroom van collector in impuls: 80A Aansluitingstijd: ...

The Infineon IHW15N120E1 power full monolithic body diode with low forward voltage designed for soft commutation only and has high ruggedness, temperature stable behaviour with low VCEsat.Very tigh...

Maximum Continuous Collector Current = 1.5 kA Maximum Collector Emitter Voltage = 1700 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 20 mW Package Type = PRIME3+ Channel Type = N...

Producent: IXYS Montage: THT Behuizing: TO247HV Collector-emitterspanning: 2,5kV Spanning poort - verzender: ±20V Stroom van de collector: 16A Stroom van collector in impuls: 126A Aansluitingstijd:...

Maximum Continuous Collector Current = 450 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 1.6 kW

The Infineon insulated-gate bipolar transistor with powerful monolithic body diode with low forward voltage designed for soft commutation.High Efficiency Low Switching Losses Increased Reliability ...

Maximum Continuous Collector Current = 900 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 4.3 kW

Producent: DIODES INCORPORATED Montage: SMD Behuizing: SOT26 Collector-emitterspanning: 40V Versterking van transistor: 20...900 Stroom van de collector: 3,5/3A Type transistor: NPN / PNP Vermogens...