IGBT  (2.896 artikelen gevonden)

Disc IGBT PT-HiFrequency ISOPLUS247 Technische spec.: Behuizingssoort (halfgeleider): TO-247IU · Minimale doorlaatspanning U(CES): 600 V · Overige technische gegevens: Package type: TO-247IU VCES -...

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Producent: STMicroelectronics Montage: THT Behuizing: TO220AB Collector-emitterspanning: 600V Spanning poort - verzender: ±20V Stroom van de collector: 20A Stroom van collector in impuls: 80A Type ...

Disc IGBT PT-Mid Frequency ISOPLUS247 Technische spec.: Behuizingssoort (halfgeleider): TO-247IU · Minimale doorlaatspanning U(CES): 600 V · Overige technische gegevens: Package type: TO-247IU VCES...

Maximum Power Dissipation = 110 W Package Type = PG-TO-220-3

Product Range TRENCHSTOP 5 MSL MSL 1 - Unlimited Collector Emitter Voltage Max 650 V Operating Temperature Max 175 °C Transistor Case Style TO-247 Collector Emitter Saturation Voltage 1.66 V Contin...

Disc IGBT NPT-Hi voltage ISOPLUS247 Technische spec.: Behuizingssoort (halfgeleider): TO-247I · Minimale doorlaatspanning U(CES): 1700 V · Overige technische gegevens: Package type: TO-247I VCES - ...

The Infineon AIKW50N65RF5 is hybrid power discrete with SiC power technology with best cost-performance is the most important aspect for auxiliary applications in electric vehicles and hybrid vehic...

Producent: NTE Electronics Montage: THT Behuizing: TO3P Collector-emitterspanning: 600V Spanning poort - verzender: ±20V Stroom van de collector: 15A Stroom van collector in impuls: 30A Aansluiting...

Disc IGBT PT-HiFrequency ISOPLUS247 Technische spec.: Behuizingssoort (halfgeleider): TO-247IU · Minimale doorlaatspanning U(CES): 1200 V · Overige technische gegevens: Package type: TO-247IU VCES ...

The Infineon insulated-gate bipolar transistor of resonant switching series with low saturation voltage.High Efficiency Low Switching Losses Increased Reliability Low Electromagnetic Interference

Disc IGBT NPT-Hi Voltage TO-268AA Technische spec.: Behuizingssoort (halfgeleider): TO-268S · Minimale doorlaatspanning U(CES): 1700 V · Overige technische gegevens: Package type: TO-268S VCES - Co...

The Infineon high speed F5 technology insulated-gate bipolar transistor offering best-in-class efficiency in hard switching and resonant topologies.High Efficiency Low Switching Losses Increased Re...

Disc IGBT NPT-Hi Voltage TO-268AA Technische spec.: Behuizingssoort (halfgeleider): TO-268S · Minimale doorlaatspanning U(CES): 1700 V · Overige technische gegevens: Package type: TO-268S VCES - Co...

Producent: INFINEON TECHNOLOGIES Montage: THT Behuizing: TO220-3 Collector-emitterspanning: 600V Spanning poort - verzender: ±20V Stroom van de collector: 20A Stroom van collector in impuls: 60A Aa...