Fastrecovery-diode  (1.698 artikelen gevonden)

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.Lower on voltage drop (VCE(sat)) Very soft ultra fast ...

The ROHM super fast recovery diode mainly used for general rectification. It has 350 V reverse voltage rating.Low switching loss High current overload capacity

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recov...

RF01VM2S is the silicon epitaxial planar type Fast Recovery Diode.Small mold type (UMD2) High speed switching

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suita...

The ROHM super fast recovery diode mainly used for general rectification. It has 200 V reverse voltage rating.Cathode common dual type Low switching loss Low forward voltage

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery c...

ROHMs fast recovery diodes are ultra high-speed, low VF, and suited for significant efficiency increase of switching power supply as well as reduction of switching loss.High-reliability TO-220 pack...

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the Mesh DM6 fast-recovery diode series. Compared with the previous Mesh fast generation, DM6 combines very low recovery charge...

The Rohm super fast recovery diode having silicon epitaxial planar type structure. It is used in general rectification application.Low forward voltage Low switching loss

The STMicroelectronics N-channel Power MOSFET is part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), ...

Mounting Type = Through Hole Package Type = TO-220NFM Maximum Continuous Forward Current = 20A Peak Reverse Repetitive Voltage = 600V Diode Configuration = Single Rectifier Type = Fast Recovery Dio...

The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery ch...

The STTH1502 uses STs new 200V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits. Packaged in TO-220AC, TO-220FPAC, and TO-220 Ins, this dev...

The STMicroelectronics Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 long leads package.Maximum junction temperature: TJ = 175 °C Low VCE(sat) = 1.55 V(typ.) @ IC = 1...