Fast-recovery-diode  (1.448 artikelen gevonden)

Diode Configuration Single Forward Surge Current 50 A Product Range ES2D Operating Temperature Max 150 °C Repetitive Peak Reverse Voltage 200 V Average Forward Current 2 A Forward Voltage Max 1.15 ...

Diode Configuration Single Forward Surge Current 10 A Product Range RGL34 Operating Temperature Max 175 °C Repetitive Peak Reverse Voltage 400 V Average Forward Current 500 mA Forward Voltage Max 1...

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recov...

The Infineon 40 A IGBT with anti-parallel diode is very soft, fast recovery anti-parallel diode and has high ruggedness, temperature stable behaviour. It used low gate charge.Low EMI Low Gate Charg...

Diode Configuration Single Forward Surge Current 100 A Product Range ES3A Operating Temperature Max 150 °C Repetitive Peak Reverse Voltage 50 V Average Forward Current 3 A Forward Voltage Max 900 m...

The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.High Efficiency Low Switching Los...

Diode Configuration Single Forward Surge Current 50 A Product Range RS2B Operating Temperature Max 150 °C Repetitive Peak Reverse Voltage 100 V Average Forward Current 1.5 A Forward Voltage Max 1.3...

The Infineon CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies.Ultra-fast body dio...

Diode Configuration Single Forward Surge Current 50 A Product Range RS2D Operating Temperature Max 150 °C Repetitive Peak Reverse Voltage 200 V Average Forward Current 1.5 A Forward Voltage Max 1.3...

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recov...

Diode Configuration Single Forward Surge Current 50 A Product Range RS2G Operating Temperature Max 150 °C Repetitive Peak Reverse Voltage 400 V Average Forward Current 1.5 A Forward Voltage Max 1.3...

This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.Lower on voltage drop (VCE(sat)) Very soft ultra fast ...

Forward Voltage Max 1 V Reverse Recovery Time 50 ns No. of Pins 2 Pin Qualification - SVHC Lead (19-Jan-2021) Diode Case Style DO-201AD Diode Configuration Single Forward Surge Current 150 A Produc...