FRAM Memory (158 artikelen)

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See Data Retention and Endurance on page 10)...

F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...

4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention NoDelay™ writes Advanced high-reliability fer...

F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...

The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and ...

Memory Size = 4kbit Organisation = 512 x 8 Interface Type = I2C Data Bus Width = 8bit Maximum Random Access Time = 10ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = ...

F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...

16-Kbit ferroelectric random access memory (F-RAM) logically organized as 2K x 8 High-endurance 100 trillion (1014) read/writes 151-year data retention (See Data Retention and Endurance on page 12)...