The Infineon HEXFET series N-channel power MOSFET. It utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This MOSFET is designed for surface mount...
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
Channel Type = N Maximum Continuous Drain Current = 250 A Maximum Drain Source Voltage = 40 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistan...
Channel Type = N Maximum Continuous Drain Current = 23 A Maximum Drain Source Voltage = 30 V Package Type = DPAK (TO-252) Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance...
Channel Type = N Maximum Continuous Drain Current = 523 A Maximum Drain Source Voltage = 40 V Package Type = D2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
Channel Type = N Maximum Continuous Drain Current = 269 A Maximum Drain Source Voltage = 75 V Package Type = D2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Pow...
The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating ...
This Infineon HEXFET® Power MOSFET utilizes the latest 35A ID processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction ...
Channel Type = N Maximum Continuous Drain Current = 68 A Maximum Drain Source Voltage = 60 V Series = HEXFET Mounting Type = Surface Mount Pin Count = 9 Maximum Drain Source Resistance = 0.007 Ω Ch...