FDP12N60NZ N-Channel MOSFET, 12 A, 600 V UniFET, 3-Pin TO-220 ON Semiconductor

Channel Type = N
Maximum Continuous Drain Current = 12 A
Maximum Drain Source Voltage = 600 V
Maximum Drain Source Resistance = 650 mΩ
Minimum Gate Threshold Voltage = 3V
Maximum Gate Source Voltage = -30 V, +30 V
Package Type = TO-220
Mounting Type = Through Hole
Transistor Configuration = Single
Channel Mode = Enhancement
Maximum Power Dissipation = 240 W
Typical Gate Charge @ Vgs = 26 nC @ 10 V

UniFET™ N-Channel MOSFET, Fairchild Semiconductor. UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress. UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.