64-Kbit ferro electric random access memory (F-RAM) logically organized as 8K x 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table) ...
Memory Size = 64kbit Organisation = 8K x 8 bit Interface Type = Serial-I2C Data Bus Width = 8bit Maximum Random Access Time = 3000ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 ...
Memory Size = 64kbit Organisation = 8K x 8 bit Interface Type = Serial-SPI Data Bus Width = 8bit Maximum Random Access Time = 25ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Di...
64-Kbit ferroelectric random access memory (F-RAM) logically organized as 8K x 8 High-endurance 10 trillion (1013) read/writes 121-year data retention (See the Data Retention and Endurance table) N...
Memory Size = 4Mbit Organisation = 512 kB x 8 Interface Type = Serial-SPI Data Bus Width = 8bit Maximum Random Access Time = 16ns Mounting Type = Surface Mount Package Type = DFN Pin Count = 8 Dime...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
Memory Size = 2Mbit Organisation = 256K x 8 bit Interface Type = Serial-SPI Data Bus Width = 8bit Maximum Random Access Time = 9ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Di...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
Memory Size = 256kbit Organisation = 32K x 8 Interface Type = I2C Data Bus Width = 8bit Maximum Random Access Time = 70ns Package Type = SOIC Pin Count = 28
Memory Size = 256kbit Organisation = 32K x 8 Interface Type = I2C Data Bus Width = 8bit Maximum Random Access Time = 70ns Package Type = SOIC Pin Count = 28
Memory Size = 4Mbit Organisation = 256K x 16 Interface Type = I2C Data Bus Width = 16bit Maximum Random Access Time = 55ns Package Type = TSOP Pin Count = 44
Memory Size = 4Mbit Organisation = 256K x 16 Interface Type = I2C Data Bus Width = 16bit Maximum Random Access Time = 55ns Package Type = TSOP Pin Count = 44
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
F-RAM, Cypress Semiconductor. Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Par...
Memory Size = 4kbit Organisation = 512 x 8 Interface Type = I2C Data Bus Width = 8bit Maximum Random Access Time = 10ns Mounting Type = Surface Mount Package Type = SOIC Pin Count = 8 Dimensions = ...
The Cypress Semiconductor FM24C04B is a 4-Kbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and ...