Channel Type = N Maximum Continuous Drain Current = 91 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 0...
Channel Type = N Maximum Continuous Drain Current = 91 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 0...
Channel Type = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 1200 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0...
Channel Type = N Maximum Continuous Drain Current = 60 A Maximum Drain Source Voltage = 1200 V Package Type = H2PAK-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 0....
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = HiP247-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = 0....
Channel Type = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 650 V Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Transistor ...
Channel Type = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 650 V Package Type = TO-220 Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Transistor ...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 800 V Package Type = DPAK-3 Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Transistor...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 800 V Package Type = DPAK-3 Mounting Type = Surface Mount Pin Count = 3 Channel Mode = Enhancement Transistor...
Channel Type = N Maximum Continuous Drain Current = 55 A Maximum Drain Source Voltage = 1200 V Series = SCTH50N120-7 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0....
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = HiP247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.07...
The STMicroelectronics silicon carbide Power MOSFET has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per ...
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 1200 V Series = SCT30N120H Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.09 ...
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.Very fast and robus...
Channel Type = N Maximum Continuous Drain Current = 16 A Maximum Drain Source Voltage = 1200 V Series = SCT Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.52 Ω Chann...
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 1200 V Series = SCT10N120H Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.52 ...
The STMicroelectronics Automotive-grade silicon carbide Power MOSFET has very tight variation of on-resistance vs. temperature. It has very high operating temperature capability.Very fast and robus...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 1200 V Package Type = HiP247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.5...
Channel Type = N Maximum Continuous Drain Current = 91 A Maximum Drain Source Voltage = 1200 V Series = SCTW70N Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.021 Ω ...
Channel Type = N Maximum Continuous Drain Current = 91 A Maximum Drain Source Voltage = 1200 V Series = SCTW70N Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.021 Ω ...
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 55m Ohm. It has low on-resistance per unit area and very good switching performan...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Series = SCTH35 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.055 Ω C...
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performan...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 650 V Package Type = HiP247 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.04...
Channel Type = N Maximum Continuous Drain Current = 45 A Maximum Drain Source Voltage = 1200 V Series = SCTWA40N120G2V-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance =...
SiC MOSFETThe STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MO...
Channel Type = N Maximum Continuous Drain Current = 40 A Maximum Drain Source Voltage = 650 V Series = SCTL35N65G2V Mounting Type = Surface Mount Pin Count = 5 Maximum Drain Source Resistance = 0.0...
The STMicroelectronics SCTL35N65G2V silicon carbide power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistance ...
Channel Type = N Maximum Continuous Drain Current = 28 A Maximum Drain Source Voltage = 600 V Series = STB37N60 Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.094 Ω...
Channel Type = N Maximum Continuous Drain Current = 28 A Maximum Drain Source Voltage = 600 V Series = STB37N60 Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.094 Ω...
Channel Type = N Maximum Continuous Drain Current = 20 A Maximum Drain Source Voltage = 1200 V Package Type = H2PAK-2 Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0...
The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.Very ti...
The STMicroelectronics N-channel 900 V, 280 mO typ., 15 A MDmesh K5 Power MOSFET in a TO-220FP package is based on an innovative proprietary vertical structure.Ultra-low gate charge 100% avalanche ...
Channel Type = N Maximum Continuous Drain Current = 15 A Maximum Drain Source Voltage = 900 V Series = SiC MOSFET Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.33 Ω...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 1200 V Package Type = H2PAK-2 Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0...
Channel Type = N Maximum Continuous Drain Current = 12 A Maximum Drain Source Voltage = 1200 V Series = STB37N60 Mounting Type = Surface Mount Pin Count = 3 Maximum Drain Source Resistance = 0.69 Ω...
Channel Type = N Maximum Continuous Drain Current = 119 A Maximum Drain Source Voltage = 650 V Series = SCTWA90N65G2V-4 Mounting Type = Through Hole Pin Count = 4 Maximum Drain Source Resistance = ...
The STMicroelectronics SCTWA90N65G2V-4 silicon carbide Power MOSFET device has been developed using advanced and innovative 2nd generation SiC MOSFET technology, features remarkably low on-resistan...
Channel Type = N Maximum Continuous Drain Current = 119 A Maximum Drain Source Voltage = 650 V Series = SCTW90 Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 0.024 Ω C...
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 119A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performa...
Channel Type = N Maximum Continuous Drain Current = 116 A Maximum Drain Source Voltage = 650 V Series = SCTH90 Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.024 Ω ...
The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 116A and drain to source resistance 18m Ohm. It has low on-resistance per unit area and very good switching performa...
Channel Type = N Maximum Continuous Drain Current = 98 A Maximum Drain Source Voltage = 650 V Series = SCT Mounting Type = Surface Mount Pin Count = 7 Maximum Drain Source Resistance = 0.02 Ω Chann...