Transistor Type = NPN Maximum DC Collector Current = 100 A Maximum Collector Emitter Voltage = 650 V Package Type = TO-247 Mounting Type = Through Hole Maximum Power Dissipation = 238 W Transistor ...
Transistor Type = PNP Maximum Collector Emitter Voltage = -30 V Package Type = TO-92 Mounting Type = Through Hole Maximum Power Dissipation = 625 mW Transistor Configuration = Single Maximum Emitte...
Transistor Type = NPN Maximum Collector Emitter Voltage = 30 V Package Type = TO-92 Mounting Type = Through Hole Maximum Power Dissipation = 625 mW Transistor Configuration = Single Maximum Emitter...
Transistor Type = NPN/PNP Maximum DC Collector Current = 200 mA Maximum Collector Emitter Voltage = 45 V Package Type = SOT-363 Mounting Type = Surface Mount Maximum Power Dissipation = 380 mW Mini...
The NPN Bipolar Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power surface mount applications.Moistur...
Transistor Type = PNP Maximum DC Collector Current = -200 mA Maximum Collector Emitter Voltage = -45 V Package Type = SOT-323 (SC-70) Mounting Type = Surface Mount Maximum Power Dissipation = 150 m...
Transistor Type = NPN Maximum Collector Emitter Voltage = 80 V dc Package Type = TO-220 Mounting Type = Through Hole Maximum Power Dissipation = 70 W Transistor Configuration = Single Maximum Emitt...
The 10 A, 100 V PNP Darlington Bipolar Power Transistor is designed for general purpose and low speed switching applications. The BDX33B, BDX33C, BDX34B and BDX34C are complementary devices.High DC...
Package Type = MicroFET 2 x 2 Mounting Type = Surface Mount Maximum Power Dissipation = 2.4 W Transistor Configuration = Single Pin Count = 6 Number of Elements per Chip = 1 Maximum Operating Tempe...
Package Type = WDFN Mounting Type = Surface Mount Maximum Power Dissipation = 1.6 W Pin Count = 8 Number of Elements per Chip = 2 Maximum Operating Temperature = +150 °C
Package Type = DPAK Mounting Type = Surface Mount Maximum Power Dissipation = 83 W Pin Count = 2 + Tab Number of Elements per Chip = 1 Maximum Operating Temperature = +150 °C
This N-Channel enhancement mode power MOSFET is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resis...
The ISL9V5036P3_F085 is the next generation IGBT that offer outstanding SCIS capability in the TO-220 plastic package. This device is intended for use in automotive ignition circuit, specifically a...
Package Type = TO-92 Mounting Type = Through Hole Maximum Power Dissipation = 350 mW Transistor Configuration = Single Pin Count = 3 Number of Elements per Chip = 1 Maximum Operating Temperature = ...
Package Type = TO-92 Mounting Type = Through Hole Maximum Power Dissipation = 350 mW Transistor Configuration = Single Pin Count = 3 Number of Elements per Chip = 1 Maximum Operating Temperature = ...
The MJ21195G and MJ21196G utilize Perforated Emitter technology and a specifically designed for high power audio output, disk head positioners and linear applications.Total Harmonic Distortion Char...
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power...
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power...
Transistor Type = PNP Maximum DC Collector Current = -10 A Maximum Collector Emitter Voltage = -40 V Package Type = TO-225 Mounting Type = Through Hole Maximum Power Dissipation = 15 W Minimum DC C...
The Bipolar Power Transistor is specifically designed for general purpose amplifier and switching applications.Isolated Overmold Package (1500 Volts RMS Min) Electrically Similar to the Popular MJE...
The High Voltage Bipolar Power NPN Transistor is designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of t...
The MJW3281A Bipolar Complementary Audio Power Transistor is a power transistor for high power audio, disk head positioners and other linear applications.Designed for 100 W Audio Frequency Gain Com...
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.Moisture Sen...
The NPN Bipolar Transistor is designed for general purpose amplifier applications. It is housed in the SOT-323/SC-70 package, which is designed for low power surface mount applications.Moisture Sen...
Transistor Type = NPN Maximum Collector Emitter Voltage = 25 V Package Type = SOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 300 mW Transistor Configuration = Single Maximum Emitt...
Transistor Type = NPN Maximum DC Collector Current = 100 mA Maximum Collector Emitter Voltage = 50 V Package Type = SOT-363 Mounting Type = Surface Mount Maximum Power Dissipation = 385 mW Transist...
Transistor Type = NPN Maximum DC Collector Current = 100 mA Maximum Collector Emitter Voltage = 50 V Package Type = SOT-323 (SC-70) Mounting Type = Surface Mount Maximum Power Dissipation = 310 mW ...
Transistor Type = NPN Maximum DC Collector Current = 100 mA Maximum Collector Emitter Voltage = 50 V Package Type = SOT-363 Mounting Type = Surface Mount Maximum Power Dissipation = 385 mW Transist...
The combination of low saturation voltage and high gain makes this Bipolar Power Transistor an ideal device for high speed switching applications where power saving is a concern.Low Collector-Emitt...
Transistor Type = NPN Maximum Collector Emitter Voltage = 60 V dc Package Type = SOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 710 mW Minimum DC Current Gain = 150 Transistor Con...