The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.High breakdown voltag...
Transistor Type = NPN Maximum DC Collector Current = 20 A Maximum Collector Emitter Voltage = 140 V Package Type = TO Mounting Type = Through Hole Maximum Power Dissipation = 100 W Minimum DC Curre...
The device is manufactured in planar technology with “;base island”; layout and monolithic Darlington configuration.Good hFE linearity Monolithic Darlington configuration with integrated antiparall...
Transistor Type = NPN Maximum DC Collector Current = 15 A Maximum Collector Emitter Voltage = 100 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Maximum Power Dissipation = 70 W Mini...
Transistor Type = PNP Maximum DC Collector Current = -10 A Maximum Collector Emitter Voltage = -50 V Package Type = SOT-89 Mounting Type = Surface Mount Maximum Power Dissipation = 1.4 W Minimum DC...
The 2STF2550 and 2STN2550 are PNP transistors manufactured using new “;PB-HCD”; (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances co...
Transistor Type = NPN Maximum DC Collector Current = 10 A Maximum Collector Emitter Voltage = 50 V Package Type = SOT-223 (SC-73) Mounting Type = Surface Mount Maximum Power Dissipation = 1.4 W Min...
The 2STF1550 and 2STN1550 are NPN transistors manufactured using new “;PB-HCD”; (Power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances co...
The device in a PNP transistor manufactured using new “;PB-HCD”; (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very...
Transistor Type = PNP Maximum DC Collector Current = -2 A Maximum Collector Emitter Voltage = -60 V Package Type = SOT-23 Mounting Type = Surface Mount Maximum Power Dissipation = 500 mW Minimum DC...
VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE BUILT IN CLAMPING ZENER SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX \″T4\″) WIDE R...
Transistor Type = NPN Maximum DC Collector Current = 30 A Maximum Collector Emitter Voltage = 350 V Package Type = TO-220AB Mounting Type = Through Hole Maximum Power Dissipation = 150 W Minimum DC...
VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE BUILT IN CLAMPING ZENER SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX \″T4\″) WIDE R...
Transistor Type = NPN Maximum DC Collector Current = 30 A Maximum Collector Emitter Voltage = 350 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Maximum Power Dissipation = 150 W Tra...
This is a high voltage fast switching NPN power transistor manufactured in multi epitaxial planar technology. It uses a cellular emitter structure with planar edge termination to enhance switching ...